Rs can indeed be obtained by 1/slope at the open-circuit voltage. However, there is not something like the Rs of a solar cell as it changes with current and thus with voltage. 1/slope is one way to express the Rs, but it can also be obtained by a fit of a one- or two-diode model that includes the Rs. This is less trivial but there are some programs available to perform the fit. Again this does not include the voltage dependence of Rs. For this reason, it should always be mentioned how Rs was derived as the different methods give different results
Rs can indeed be obtained by 1/slope at the open-circuit voltage. However, there is not something like the Rs of a solar cell as it changes with current and thus with voltage. 1/slope is one way to express the Rs, but it can also be obtained by a fit of a one- or two-diode model that includes the Rs. This is less trivial but there are some programs available to perform the fit. Again this does not include the voltage dependence of Rs. For this reason, it should always be mentioned how Rs was derived as the different methods give different results
to introduce the effect of surface recombination velocity , interface statement is used
how to choose the value of x.min x.max y.min y.max witch region?
to introduce the effect of surface recombination velocity , interface statement is usedhow to choose the value of x.min x.max y.min y.max witch region?
Dear Hamideh Hasanzadeh , Would you please depict to us a case study? For the normal working solar cells there will be no appreciable difference between the methods which I brought in my previous comments as they are physically based and the the methods by curve fitting. The curve fitting method can exaggerate one parameter on the cost of the others. It can also that the the shunt resistance depends on the bias voltage as for example the shunt resistance due to pinholes and grain boundaries. Also, i indicated in my study that Rs is also bias dependent because of the two dimensional effects of the nonuniform cathode metallization. What one determines is an average Rs. Please review again the paper which I brought in my first paper. ArticleA distributed SPICE-model of a solar cell
Dear Hamideh Hasanzadeh , Would you please depict to us a case study? For the normal working solar cells there will be no appreciable difference between the methods which I brought in my previous comments as they are physically based and the the methods by curve fitting. The curve fitting method can exaggerate one parameter on the cost of the others. It can also that the the shunt resistance depends on the bias voltage as for example the shunt resistance due to pinholes and grain boundaries. Also, i indicated in my study that Rs is also bias dependent because of the two dimensional effects of the nonuniform cathode metallization. What one determines is an average Rs. Please review again the paper which I brought in my first paper. ArticleA distributed SPICE-model of a solar cell
What it indicates actually? There is no resistor connected to solar cell, and we are calculating shunt and series resistance. Can anybody explain its existence and use.
What it indicates actually? There is no resistor connected to solar cell, and we are calculating shunt and series resistance. Can anybody explain its existence and use.
Babaji Ghule -- this is about the standard equivalent circuit of a solar cell which serves to describe the actual device with all its real-world properties (e.g., internal leakage currents and/or internal voltage losses) by idealized components (as, e.g., perfect photocurrent source, ideal p-n junction diode). Only in combination with additional components (e.g., series and shunt resistance), put together with the ideal components in a straightforward way, this equivalent circuit is supposed to mimic the behavior of the actual device. Thus, series and shunt resistance are just means to account for the internal leakage currents and/or internal voltage losses of real-world devices. Of course, the standard equivalent circuit is a simplified model of a solar cell, aiming at a lumped description that may provide an interpretation of measured current--voltage characteristics. However, some solar cells show effects that can only be reasonably accounted for by a spatially distributed model. One such effect is the distributed series resistance in large-area silicon solar cells. Interestingly, we have found a way to fully incorporate this distributed effect in a lumped description, leading to a slightly modified equivalent circuit. For details see my latest work, "Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells" (open access paper). ArticleFundamental Aspects Concerning the Validity of the Standard ...
Babaji Ghule -- this is about the standard equivalent circuit of a solar cell which serves to describe the actual device with all its real-world properties (e.g., internal leakage currents and/or internal voltage losses) by idealized components (as, e.g., perfect photocurrent source, ideal p-n junction diode). Only in combination with additional components (e.g., series and shunt resistance), put together with the ideal components in a straightforward way, this equivalent circuit is supposed to mimic the behavior of the actual device. Thus, series and shunt resistance are just means to account for the internal leakage currents and/or internal voltage losses of real-world devices. Of course, the standard equivalent circuit is a simplified model of a solar cell, aiming at a lumped description that may provide an interpretation of measured current--voltage characteristics. However, some solar cells show effects that can only be reasonably accounted for by a spatially distributed model. One such effect is the distributed series resistance in large-area silicon solar cells. Interestingly, we have found a way to fully incorporate this distributed effect in a lumped description, leading to a slightly modified equivalent circuit. For details see my latest work, "Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells" (open access paper). ArticleFundamental Aspects Concerning the Validity of the Standard ...
Dear Mojtaba , You can calculate Rs and Rsh from the dark I-V by ploting differential resistance vs voltage. It is clearly explained in the paper attached below.
Dear Mojtaba , You can calculate Rs and Rsh from the dark I-V by ploting differential resistance vs voltage. It is clearly explained in the paper attached below.
Dear Amr, Dear colleagues There exist a very practical method to determine the shunt and the series resistance by first plotting the the dark I-V characteristic. in this case you can interpolate the the characteristics near zero voltage where the the I-V characteristics will be a clear straight line. You can get the best fir straight line, where its inverse slope will be the shunt resistance. Then we plot the I-V characteristics in a semi log scale, it will be a straight line in the middle current range where the current is dominated by the exponential dependence. The semilog I-V characteristics deviates from the straight line at high currents. The deviation of the voltage dV at certain current is due to the voltage drop on the series resistance IRs. So, Rs = dV/ I. To see this tecniques applied for extracting the solar cell parameters please follow the link:https://www.researchgate.net/publication/3062547_A_distributed_SPICE-model_of_a_solar_cell ArticleA distributed SPICE-model of a solar cell
Dear Amr, Dear colleagues There exist a very practical method to determine the shunt and the series resistance by first plotting the the dark I-V characteristic. in this case you can interpolate the the characteristics near zero voltage where the the I-V characteristics will be a clear straight line. You can get the best fir straight line, where its inverse slope will be the shunt resistance. Then we plot the I-V characteristics in a semi log scale, it will be a straight line in the middle current range where the current is dominated by the exponential dependence. The semilog I-V characteristics deviates from the straight line at high currents. The deviation of the voltage dV at certain current is due to the voltage drop on the series resistance IRs. So, Rs = dV/ I. To see this tecniques applied for extracting the solar cell parameters please follow the link:https://www.researchgate.net/publication/3062547_A_distributed_SPICE-model_of_a_solar_cell ArticleA distributed SPICE-model of a solar cell
Mojtaba, You can determine the series resistance by calculating the inverse of the slope of the I-V curve at the open circuit voltage and you can determine the shunt resistance from the inverse of the slope of the I-V curve at the short circuit condition V=0. If you are interested in the other parameters of one diode model you can use the curve fitting methods to determine them. The one diode model parameters are IS, the reverse saturation current, the ideality factor n, the series resistance RS and the shunt resistance RSH in addition to the photocurrent IPH.
Mojtaba, You can determine the series resistance by calculating the inverse of the slope of the I-V curve at the open circuit voltage and you can determine the shunt resistance from the inverse of the slope of the I-V curve at the short circuit condition V=0. If you are interested in the other parameters of one diode model you can use the curve fitting methods to determine them. The one diode model parameters are IS, the reverse saturation current, the ideality factor n, the series resistance RS and the shunt resistance RSH in addition to the photocurrent IPH.
I tried the method presented by Prof. Mojaba, and it's correct.If forward scanning, the value of Jsc is negative after origin, then you should take note to multiply (-1) as no sense for Log (negative value).
I tried the method presented by Prof. Mojaba, and it's correct.If forward scanning, the value of Jsc is negative after origin, then you should take note to multiply (-1) as no sense for Log (negative value).
Single diode with Rs and Rp are not sufficient to model of all types of PV. For example, You need two different diodes for a-Si model.
Single diode with Rs and Rp are not sufficient to model of all types of PV. For example, You need two different diodes for a-Si model.
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Abdelhalim abdelnaby Zekry
Dear professor
why the difference between this method and the equivalent circuit is large?
Abdelhalim abdelnaby Zekry
Dear professor
why the difference between this method and the equivalent circuit is large?
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Rs can indeed be obtained by 1/slope at the open-circuit voltage. However, there is not something like the Rs of a solar cell as it changes with current and thus with voltage. 1/slope is one way to express the Rs, but it can also be obtained by a fit of a one- or two-diode model that includes the Rs. This is less trivial but there are some programs available to perform the fit. Again this does not include the voltage dependence of Rs. For this reason, it should always be mentioned how Rs was derived as the different methods give different results
Rs can indeed be obtained by 1/slope at the open-circuit voltage. However, there is not something like the Rs of a solar cell as it changes with current and thus with voltage. 1/slope is one way to express the Rs, but it can also be obtained by a fit of a one- or two-diode model that includes the Rs. This is less trivial but there are some programs available to perform the fit. Again this does not include the voltage dependence of Rs. For this reason, it should always be mentioned how Rs was derived as the different methods give different results
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to introduce the effect of surface recombination velocity , interface statement is used how to choose the value of x.min x.max y.min y.max
witch region?
to introduce the effect of surface recombination velocity , interface statement is usedhow to choose the value of x.min x.max y.min y.max
witch region?
More
VOTE
Dear Hamideh Hasanzadeh ,
Would you please depict to us a case study?
For the normal working solar cells there will be no appreciable difference between the methods which I brought in my previous comments as they are physically based and the the methods by curve fitting. The curve fitting method can exaggerate one parameter on the cost of the others.
It can also that the the shunt resistance depends on the bias voltage as for example the shunt resistance due to pinholes and grain boundaries.
Also, i indicated in my study that Rs is also bias dependent because of the two dimensional effects of the nonuniform cathode metallization.
What one determines is an average Rs.
Please review again the paper which I brought in my first paper.
Article A distributed SPICE-model of a solar cell
best wishes
Dear Hamideh Hasanzadeh ,
Would you please depict to us a case study?
For the normal working solar cells there will be no appreciable difference between the methods which I brought in my previous comments as they are physically based and the the methods by curve fitting. The curve fitting method can exaggerate one parameter on the cost of the others.
It can also that the the shunt resistance depends on the bias voltage as for example the shunt resistance due to pinholes and grain boundaries.
Also, i indicated in my study that Rs is also bias dependent because of the two dimensional effects of the nonuniform cathode metallization.
What one determines is an average Rs.
Please review again the paper which I brought in my first paper.
Article A distributed SPICE-model of a solar cell
best wishes
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VOTE
Much helpful info from Abdelhalim Zekry .
Much helpful info from Abdelhalim Zekry .
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What it indicates actually?
There is no resistor connected to solar cell, and we are calculating shunt and series resistance.
Can anybody explain its existence and use.
What it indicates actually?
There is no resistor connected to solar cell, and we are calculating shunt and series resistance.
Can anybody explain its existence and use.
More
VOTE
Babaji Ghule -- this is about the standard equivalent circuit of a solar cell which serves to describe the actual device with all its real-world properties (e.g., internal leakage currents and/or internal voltage losses) by idealized components (as, e.g., perfect photocurrent source, ideal p-n junction diode). Only in combination with additional components (e.g., series and shunt resistance), put together with the ideal components in a straightforward way, this equivalent circuit is supposed to mimic the behavior of the actual device. Thus, series and shunt resistance are just means to account for the internal leakage currents and/or internal voltage losses of real-world devices.
Of course, the standard equivalent circuit is a simplified model of a solar cell, aiming at a lumped description that may provide an interpretation of measured current--voltage characteristics. However, some solar cells show effects that can only be reasonably accounted for by a spatially distributed model. One such effect is the distributed series resistance in large-area silicon solar cells. Interestingly, we have found a way to fully incorporate this distributed effect in a lumped description, leading to a slightly modified equivalent circuit. For details see my latest work, "Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells" (open access paper).
Article Fundamental Aspects Concerning the Validity of the Standard ...
Babaji Ghule -- this is about the standard equivalent circuit of a solar cell which serves to describe the actual device with all its real-world properties (e.g., internal leakage currents and/or internal voltage losses) by idealized components (as, e.g., perfect photocurrent source, ideal p-n junction diode). Only in combination with additional components (e.g., series and shunt resistance), put together with the ideal components in a straightforward way, this equivalent circuit is supposed to mimic the behavior of the actual device. Thus, series and shunt resistance are just means to account for the internal leakage currents and/or internal voltage losses of real-world devices.
Of course, the standard equivalent circuit is a simplified model of a solar cell, aiming at a lumped description that may provide an interpretation of measured current--voltage characteristics. However, some solar cells show effects that can only be reasonably accounted for by a spatially distributed model. One such effect is the distributed series resistance in large-area silicon solar cells. Interestingly, we have found a way to fully incorporate this distributed effect in a lumped description, leading to a slightly modified equivalent circuit. For details see my latest work, "Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells" (open access paper).
Article Fundamental Aspects Concerning the Validity of the Standard ...
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Dear Mojtaba ,
You can calculate Rs and Rsh from the dark I-V by ploting differential resistance vs voltage.
It is clearly explained in the paper attached below.
Dear Mojtaba ,
You can calculate Rs and Rsh from the dark I-V by ploting differential resistance vs voltage.
It is clearly explained in the paper attached below.
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VOTE
Dear Amr,
Dear colleagues
There exist a very practical method to determine the shunt and the series resistance by first plotting the the dark I-V characteristic. in this case you can interpolate the the characteristics near zero voltage where the the I-V characteristics will be a clear straight line. You can get the best fir straight line, where its inverse slope will be the shunt resistance.
Then we plot the I-V characteristics in a semi log scale, it will be a straight line in the middle current range where the current is dominated by the exponential dependence.
The semilog I-V characteristics deviates from the straight line at high currents. The deviation of the voltage dV at certain current is due to the voltage drop on the series resistance IRs. So, Rs = dV/ I.
To see this tecniques applied for extracting the solar cell parameters please follow the link:https://www.researchgate.net/publication/3062547_A_distributed_SPICE-model_of_a_solar_cell
Article A distributed SPICE-model of a solar cell
Dear Amr,
Dear colleagues
There exist a very practical method to determine the shunt and the series resistance by first plotting the the dark I-V characteristic. in this case you can interpolate the the characteristics near zero voltage where the the I-V characteristics will be a clear straight line. You can get the best fir straight line, where its inverse slope will be the shunt resistance.
Then we plot the I-V characteristics in a semi log scale, it will be a straight line in the middle current range where the current is dominated by the exponential dependence.
The semilog I-V characteristics deviates from the straight line at high currents. The deviation of the voltage dV at certain current is due to the voltage drop on the series resistance IRs. So, Rs = dV/ I.
To see this tecniques applied for extracting the solar cell parameters please follow the link:https://www.researchgate.net/publication/3062547_A_distributed_SPICE-model_of_a_solar_cell
Article A distributed SPICE-model of a solar cell
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Mojtaba,
You can determine the series resistance by calculating the inverse of the slope of the I-V curve at the open circuit voltage and you can determine the shunt resistance from the inverse of the slope of the I-V curve at the short circuit condition V=0.
If you are interested in the other parameters of one diode model you can use the curve fitting methods to determine them. The one diode model parameters are IS, the reverse saturation current, the ideality factor n, the series resistance RS and the shunt resistance RSH in addition to the photocurrent IPH.
Mojtaba,
You can determine the series resistance by calculating the inverse of the slope of the I-V curve at the open circuit voltage and you can determine the shunt resistance from the inverse of the slope of the I-V curve at the short circuit condition V=0.
If you are interested in the other parameters of one diode model you can use the curve fitting methods to determine them. The one diode model parameters are IS, the reverse saturation current, the ideality factor n, the series resistance RS and the shunt resistance RSH in addition to the photocurrent IPH.
More
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I tried the method presented by Prof. Mojaba, and it's correct.If forward scanning, the value of Jsc is negative after origin, then you should take note to multiply (-1) as no sense for Log (negative value).
I tried the method presented by Prof. Mojaba, and it's correct.If forward scanning, the value of Jsc is negative after origin, then you should take note to multiply (-1) as no sense for Log (negative value).
More
VOTE