For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation. ArticleElectron effective mass in unintentionally doped In0.33Ga0.6...
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values. However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here: ArticleInfluence of exchange and correlation on structural and elec...
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation. ArticleElectron effective mass in unintentionally doped In0.33Ga0.6...
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values. However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here: ArticleInfluence of exchange and correlation on structural and elec...
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation. ArticleElectron effective mass in unintentionally doped In0.33Ga0.6...
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values. However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here: ArticleInfluence of exchange and correlation on structural and elec...
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation. ArticleElectron effective mass in unintentionally doped In0.33Ga0.6...
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values. However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here: ArticleInfluence of exchange and correlation on structural and elec...
Dear Chettri, The effective mass of electron and hole of InxGa1-xN depend on the Indium content. The effective masses are calculated through the vegard's law between InN and GaN. See the reference ArticleAdvantages of InGaN/InGaN quantum well light emitting diodes...
Dear Chettri, The effective mass of electron and hole of InxGa1-xN depend on the Indium content. The effective masses are calculated through the vegard's law between InN and GaN. See the reference ArticleAdvantages of InGaN/InGaN quantum well light emitting diodes...
Dear Mr. Chettri, please read the following article
https://journals.le.ac.uk/ojs1/index.php/pst/article/viewFile/2331/2235
Dear Mr. Chettri, please read the following article
https://journals.le.ac.uk/ojs1/index.php/pst/article/viewFile/2331/2235
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We have measured experimentally the electron effective mass in InGaN with In of 33%, see Article Electron effective mass in unintentionally doped In0.33Ga0.6...
. We also provide information on the effect of composition and carrier concentration.
We have measured experimentally the electron effective mass in InGaN with In of 33%, see Article Electron effective mass in unintentionally doped In0.33Ga0.6...
. We also provide information on the effect of composition and carrier concentration.
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Dear Dhanu Chettri,
I suspect you are looking into wurtzite GaN. In this case, what the colleagues recommended is not fully state-of-the-art. For GaN, we did measure effective electron masses: Article Anisotropy of effective electron masses in highly doped nonpolar GaN
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation.
Article Electron effective mass in unintentionally doped In0.33Ga0.6...
Electron masses are not dependent on well thickness but weakly on strain: Article Effects of strain on the electron effective mass in GaN and AlN
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values.
However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here:
Article Influence of exchange and correlation on structural and elec...
Regards,
Martin
Dear Dhanu Chettri,
I suspect you are looking into wurtzite GaN. In this case, what the colleagues recommended is not fully state-of-the-art. For GaN, we did measure effective electron masses: Article Anisotropy of effective electron masses in highly doped nonpolar GaN
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation.
Article Electron effective mass in unintentionally doped In0.33Ga0.6...
Electron masses are not dependent on well thickness but weakly on strain: Article Effects of strain on the electron effective mass in GaN and AlN
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values.
However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here:
Article Influence of exchange and correlation on structural and elec...
Regards,
Martin
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Dear Dhanu Chettri,
I suspect you are looking into wurtzite GaN. In this case, what the colleagues recommended is not fully state-of-the-art. For GaN, we did measure effective electron masses: Article Anisotropy of effective electron masses in highly doped nonpolar GaN
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation.
Article Electron effective mass in unintentionally doped In0.33Ga0.6...
Electron masses are not dependent on well thickness but weakly on strain: Article Effects of strain on the electron effective mass in GaN and AlN
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values.
However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here:
Article Influence of exchange and correlation on structural and elec...
Regards,
Martin
Dear Dhanu Chettri,
I suspect you are looking into wurtzite GaN. In this case, what the colleagues recommended is not fully state-of-the-art. For GaN, we did measure effective electron masses: Article Anisotropy of effective electron masses in highly doped nonpolar GaN
For InGaN, you will have to interpolate towards smaller values however, for small In mole fractions (approx. <20%) the effective mass of pure GaN does work well as an approximation.
Article Electron effective mass in unintentionally doped In0.33Ga0.6...
Electron masses are not dependent on well thickness but weakly on strain: Article Effects of strain on the electron effective mass in GaN and AlN
Hole masses are a completely different story. They should be described by Luttinger-like parameters and are again not dependent on well thickness but the derived masses are very sensitive to strain and strongly anisotropic. Those Luttinger-like or valence band parameters are not easily available experimentally, you'll have to use theoretical values.
However, for an estimate of quantization energies (particle-in-a-box-problem), you can start by using hole masses explicitly given for GaN e.g. from here:
Article Influence of exchange and correlation on structural and elec...
Regards,
Martin
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Dear Chettri,
The effective mass of electron and hole of InxGa1-xN depend on the Indium content. The effective masses are calculated through the vegard's law between InN and GaN. See the reference Article Advantages of InGaN/InGaN quantum well light emitting diodes...
in Table 1
Dear Chettri,
The effective mass of electron and hole of InxGa1-xN depend on the Indium content. The effective masses are calculated through the vegard's law between InN and GaN. See the reference Article Advantages of InGaN/InGaN quantum well light emitting diodes...
in Table 1
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Dear Dhanu Chettri,
I think the following links will help you :
http://www.ioffe.ru/SVA/NSM/Semicond/ : http://www.ioffe.ru/SVA/NSM/Semicond/InN/index.html : http://www.ioffe.ru/SVA/NSM/Semicond/GaN/index.html
Best Wishes,
Dear Dhanu Chettri,
I think the following links will help you :
http://www.ioffe.ru/SVA/NSM/Semicond/ : http://www.ioffe.ru/SVA/NSM/Semicond/InN/index.html : http://www.ioffe.ru/SVA/NSM/Semicond/GaN/index.html
Best Wishes,
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Dear Dhanu ,
please go through these two links.
https://arxiv.org/ftp/arxiv/papers/1702/1702.06009.pdf
http://www.ieo.nctu.edu.tw/sclab/2014/Hole%20injection%20and%20electron%20overflow%20improvement%20in%20InGaN-GaN%20light-emitting%20diodes%20by%20a%20tapered%20AlGaN%20electron%20blocking%20layer.pdf
regards,
Mijanur
Dear Dhanu ,
please go through these two links.
https://arxiv.org/ftp/arxiv/papers/1702/1702.06009.pdf
http://www.ieo.nctu.edu.tw/sclab/2014/Hole%20injection%20and%20electron%20overflow%20improvement%20in%20InGaN-GaN%20light-emitting%20diodes%20by%20a%20tapered%20AlGaN%20electron%20blocking%20layer.pdf
regards,
Mijanur
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