Chemical Material Oxygen O2 Professional Chemical Reagent Manufacturers from China

1. Description :

Oxygen, the 16th group non-metallic element of the second cycle of the periodic table, is the most abundant and widely distributed element in the earth's crust, and the most important element in the biological and non-biological worlds. Oxygen can react directly with all metals and non-metals. It can form peroxides and superoxides with active metals.

The oxygen density is 1.404g/L, the relative density of the liquid is 1.149 (-183℃), the relative density of the solid is 1.426 (-252.5℃), the melting point is -218.79℃, the boiling point is -182.95℃. Oxygen is not easily soluble in water, ethanol and organic solvents, and its electronegativity is second only to fluorine, and all chemical elements can directly or indirectly combine with oxygen to form various oxides. In addition to inert gases, halogens and some inactive metals (such as gold, platinum, etc.), oxygen can react directly with all metals and non-metals. It can form peroxides and superoxides with active metals. The laboratory can be prepared by the thermal decomposition of potassium chlorate or potassium nitrate, and can also be prepared by the thermal decomposition of heavy metal oxides or the reaction of metal peroxides with water and acid. It is prepared by liquid air fractionation in industry.

1. Specification:

1. Packing :
2. 
   

3. Product	Oxygen O2
   Package Size	40Ltr Cylinder	50Ltr Cylinder	ISO TANK
   Filling Content/Cyl	5CBM	10CBM	/
   QTY Loaded in 20'Container	240Cyls	200Cyls
   Total Volume	1200CBM	2000CBM
   Cylinder Tare Weight	50Kgs	55Kgs
   Valve	PX-32A/QF-2/CGA540

1. Application:

Industry Use: Steel making, non-ferrous metal smelting.Cutting metal material.

Medical Use: In first-aid treatment of emergencies such as suffocation and heart attack, in the treatment of patients with respiratory disorders and in anaesthesia.

Semiconductor Fabrication: Chemical vapour deposition of silicon dioxide, thermal oxide growth, plasma etching, plasma stripping of photoresist and carrier gas in certain deposition/diffusion operations .