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SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound buy - large image1

SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound buy - image1

SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound buy - image2

SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound buy - image3

SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound buy - image4

SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound

Name: SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound
Brand: jianxin
SKU: pr2607171523
Price: 1 USD
Availability: InStock

Unit Price:

$1-1.3/MT FOB

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CAS No.:

12024-14-5

Grade:

Industrial Grade

Content:

99.99%

Port:

shanghai

Brand:

jianxin

Packaging:

1kg/standard bag

Price valid (until):

2030-01-01

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Shanghai Jianqi Chemical Company

Company Type:

Trader

Location:

China

Qualification:

Main Products:

chemical raw materials

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Product Description
Seller Information

Description

Product Detail

SCHPM branded 99.999% (5N) high purity Gallium Telluride (GaTe) with CAS number 12024-14-5 is a premium layered narrow-bandgap semiconductor inorganic compound refined through high-temperature stoichiometric solid-state synthesis paired with vacuum multi-stage impurity separation technology. This ultra-pure gallium-tellurium binary compound is an irreplaceable core precursor raw material for global advanced optoelectronic manufacturing, infrared detection equipment production, vacuum thin film epitaxy industry and university new material research laboratories, distinguished by its unique two-dimensional van der Waals crystal structure and outstanding infrared photoelectric response performance.

Physically, GaTe presents uniform gray-black lamellar crystal chunks and fine crystal powder with subtle metallic luster and obvious brittle layered texture. Its internal crystal lattice is bonded by weak van der Waals force between layers, which allows simple mechanical or liquid-phase exfoliation to produce atom-level ultra-thin two-dimensional semiconductor nanosheets without destroying intrinsic crystal electronic properties. Chemically, GaTe maintains stable phase composition in dry, oxygen-isolated environment; once exposed to humid air containing oxygen and sulfur vapor, the crystal surface will slowly form gallium oxide and tellurium oxide mixed impurity film, causing attenuation of photoelectric signal performance, so inert gas vacuum sealed packaging is mandatory for all finished products to lock original crystal purity.

Our exclusive high-purity synthesis route strictly controls residual foreign metal impurities such as sodium, potassium, iron, lead, indium and selenium down to ppb levels, and adopts XRD full-phase detection to guarantee 100% single-phase GaTe without excess elemental gallium, elemental tellurium or gallium tritelluride heterophase mixing. Tiny trace metal and miscellaneous phase impurities will generate massive trap defects inside semiconductor thin films, increase dark current of infrared photodetectors and reduce light signal conversion efficiency, while SCHPM 5N grade gallium telluride thoroughly eliminates such negative interference, greatly raising finished optoelectronic device yield and long-term operational stability.

In vacuum coating and epitaxy production workshops, GaTe crystal chunks and pellets serve as thermal evaporation source and MBE growth raw material for depositing uniform 2D GaTe conductive thin films on silicon and glass substrates. The narrow bandgap characteristic of gallium telluride enables high-efficiency absorption of visible light and mid-infrared band light signals, making it the core functional layer raw material for self-powered infrared photodetectors, laser signal switches and low-light image sensors. New energy research institutes apply GaTe nanosheets to develop narrow-bandgap photovoltaic thin film solar cells to enhance near-infrared light capture capacity and battery photoelectric conversion rate.

For university chemical and material science labs, SCHPM 5N gallium telluride is widely adopted as standard high-purity compound reagent for synthesizing gallium-tellurium-based semiconductor alloys and quantum dot materials, as well as reference substance for ICP-MS element calibration testing to ensure accurate and repeatable experimental data of thin film performance characterization. Radiation detection equipment factories also take GaTe as auxiliary raw material for growing high-sensitivity tellurium-based scintillation crystals to improve radiation signal capture sensitivity of medical and industrial radiation testing instruments.

Strict 5N 99.999% purity standard, trace impurities (Na, K, Fe, Pb, In, Se) controlled below 0.5 ppm, no lattice defects for epitaxial film growth
Synthesized via high-temperature solid-state reaction + vacuum purification, single-phase pure GaTe without residual Ga₂Te₃ or elemental Ga/Te heterophase
Unique layered van der Waals crystal structure, easy mechanical exfoliation into ultra-thin 2D nanosheets with stable photoelectric response
Narrow bandgap semiconductor property, high infrared light absorption rate, excellent signal sensitivity for infrared detection equipment
Nitrogen-filled vacuum light-proof sealed packaging to avoid oxidation and surface deterioration during transportation and storage
Complete supporting documents: GDMS full-spectrum impurity test report, COA, MSDS, customs clearance certification
Flexible supply: milligram lab trial samples and tonnage bulk industrial orders with long-term stable spot stock

Items	Specifications
Chemical Name	Gallium Telluride GaTe
Appearance	Gray-black layered lamellar crystal solid
Package	Vacuum nitrogen-sealed aluminum alloy bottle / sealed iron drum

Shop SCHPM 5N Ultra High Purity Gallium Telluride GaTe Crystal Material 99.999% CAS 12024-14-5 Semiconductor Basic Compound-Detailed Image 1

Basic Info

Product Name:

Gallium telluride (GaTe)

Other Name:

Gallium telluride (GaTe);Gallium monotelluride;Gallium monotelluride (GaTe);Gallium telluride (Ga2Te2);65762-28-9

CAS No.:

12024-14-5

Molecular Formula:

GaTe

InChIKeys:

InChIKey=OFIYHXOOOISSDN-UHFFFAOYSA-N

Molecular Weight:

197.32

Exact Mass:

201.85500

EC Number:

234-690-1

Categories:

Bulk Drug Intermediates

Characteristics

PSA:

XLogP3:

-0.42410

Density:

5.440

Melting Point:

824°C

Water Solubility:

Insoluble in water.

See More Gallium telluride (GaTe) Properties 

Hazard Identification

Classification of the substance or mixture

Acute toxicity - Category 4, Oral

Skin irritation, Category 2

Eye irritation, Category 2

Specific target organ toxicity â single exposure, Category 3

GHS label elements, including precautionary statements

Precautionary statement(s)
Pictogram(s)
Signal word	Warning
Hazard statement(s)	H302 Harmful if swallowed H315 Causes skin irritation H319 Causes serious eye irritation H335 May cause respiratory irritation
Prevention	P264 Wash ... thoroughly after handling. P270 Do not eat, drink or smoke when using this product. P280 Wear protective gloves/protective clothing/eye protection/face protection/hearing protection/... P261 Avoid breathing dust/fume/gas/mist/vapours/spray. P271 Use only outdoors or in a well-ventilated area.
Response	P301+P317 IF SWALLOWED: Get medical help. P330 Rinse mouth. P302+P352 IF ON SKIN: Wash with plenty of water/... P321 Specific treatment (see ... on this label). P332+P317 If skin irritation occurs: Get medical help. P362+P364 Take off contaminated clothing and wash it before reuse. P305+P351+P338 IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses, if present and easy to do. Continue rinsing. P304+P340 IF INHALED: Remove person to fresh air and keep comfortable for breathing. P319 Get medical help if you feel unwell.
Storage	P403+P233 Store in a well-ventilated place. Keep container tightly closed. P405 Store locked up.
Disposal	P501 Dispose of contents/container to an appropriate treatment and disposal facility in accordance with applicable laws and regulations, and product characteristics at time of disposal.

Other hazards which do not result in classification

no data available

Handling and Storage

Precautions for safe handling

Handling in a well ventilated place. Wear suitable protective clothing. Avoid contact with skin and eyes. Avoid formation of dust and aerosols. Use non-sparking tools. Prevent fire caused by electrostatic discharge steam.

Conditions for safe storage, including any incompatibilities

Store the container tightly closed in a dry, cool and well-ventilated place. Store apart from foodstuff containers or incompatible materials.

See More Gallium telluride (GaTe) Safety Data Sheet 

Seller Information

Business Type:
Trader

Main Products:
chemical raw materials

Location:
Building 1, Unit 5, Room 313, Building L, No. 688 Qiushi Road, Jinshuiwei Town, Jinshan District, Shanghai

Average lead Time:
10

Total Annual Revenue:
$1 million-$2.5 million

Total Employees:
11-50

Year of Establishment:
2019
Country Product Purchase Quantity Date Posted

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