Gallium phosphide

At present, gallium phosphide crystals are mainly prepared by high-pressure single crystal furnace liquid sealing technology and epitaxial method. The liquid-sealed Czochralski method uses a high-pressure single-crystal furnace, adds polycrystalline gallium phosphide to the alloy quartz crucible of the single-crystal furnace, then evacuates and melts, and fills with 5.5 Mpa of argon pressure, then sealed with boron trioxide liquid Pull crystal. Due to the high decomposition pressure of gallium phosphide, under typical growth conditions, a certain amount of phosphorus overflows and interacts with diboron trioxide, making the transparency of diboron trioxide worse, and some condensation on the observation hole hinders the observation. This can be used to control the crystal diameter by X-ray scanning and weighing method, etc. to obtain the finished product of gallium phosphide single crystal. In the synthetic solute diffusion method (SSD method), gallium is placed in a quartz crucible, the gallium source temperature is between 1100 and 1150°C, the temperature at the bottom of the crucible where the gallium phosphide seed crystal is placed is 1000 to 1050°C, and the phosphorus source temperature is 420°C. At this time, about 0.1 Mpa of phosphorus vapor pressure is generated, and the dissociation pressure of gallium phosphide at 1150°C is 0.67 Pa, so under 0.1 Mpa of phosphorus vapor pressure, gallium phosphide can grow stably. Initially, the phosphorus vapor reacts with the gallium surface at high temperature to form a gallium phosphide film. This gallium phosphide dissolves in the gallium liquid below and diffuses towards the bottom of the crucible. Due to the low temperature at the bottom of the crucible, when the gallium phosphide exceeds the solubility, crystals will be precipitated. If the phosphorus source is sufficient, the gallium liquid will eventually become all Gallium phosphide crystal. Gallium phosphide epitaxial growth The single crystal prepared by the above method is mainly used as a substrate. The liquid and gas phase epitaxy methods can be used to prepare thin film single crystals. The liquid phase epitaxial methods of gallium phosphide mainly include immersion method, rotating method and sliding boat method. At present, the sliding boat method is mostly used. The gas phase epitaxy mainly includes: Ga-PCI3-H2; GaHCl-PH3-H2; GaP-H2O(HCl)-H2 system and MOCVD method (metal organic thermal decomposition vapor growth method). Recently, InP and InP have been adopted; aAsP multilayer semiconductors have developed devices with functions such as optical amplification, optical calculation, and optical memory.

In semiconductor electronics.

Molecular Weight:100.697
Exact Mass:99.89934
Monoisotopic Mass:99.89934
Heavy Atom Count:2
Complexity:10
Covalently-Bonded Unit Count:1
Compound Is Canonicalized:Yes